Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements

Ion bombardment provides an opportunity to study basic properties of intrinsic defects in materials since the radiation-induced disorder accumulation depends on balance between defect generation and migration rates. In particular, variation such parameters as irradiation temperature ion flux, known literature dose-rate effect, interconnects macroscopically measured lattice with barrier dominating defects. this work, we effect monoclinic gallium oxide (?-Ga2O3) extracted its activation energy 0.8 ± 0.1 eV range 25–250 °C. Taking into account that measurements were performed Ga-sublattice considering context theoretical data, interpreted it for Ga vacancies ?-Ga2O3, limiting process. Additionally, observed took interesting form relaxation due buildup, terms compressive strain accumulation, potentially trigging phase transitions Ga2O3 lattice.